| Collector-Emitter Saturation Voltage | 600 V |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 380 W |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current at 25 C | 75 A |
| Minimum Operating Temperature | - 55 C |
| Packaging | Tube |
| Product | IGBT Silicon Modules |