IXGR72N60A3H1

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IGBT Modules Low-Frequency Range Low Vcesat w/ Diode

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IGBT Modules Low-Frequency Range Low Vcesat w/ Diode

Products specifications

Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	600 V
Pd - Power Dissipation	200 W
Packaging	Tube
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	75 A
Gate-Emitter Leakage Current	100 nA

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Products specifications

Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	600 V
Pd - Power Dissipation	200 W
Packaging	Tube
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	75 A
Gate-Emitter Leakage Current	100 nA