IGBT Transistors 32 Amps 1700V 2.5 Rds
Products specifications
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Technology | Si |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Continuous Collector Current at 25 C | 75 A |
| Pd - Power Dissipation | 350 W |
| Mounting Style | Through Hole |
| Packaging | Tube |