IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Products specifications
| Collector- Emitter Voltage VCEO Max | 650 V |
| Maximum Operating Temperature | + 175 C |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 55 C |
| Continuous Collector Current at 25 C | 210 A |
| Pd - Power Dissipation | 750 W |
| Packaging | Tube |
| Collector-Emitter Saturation Voltage | 1.98 V |
| Gate-Emitter Leakage Current | 100 nA |
| Configuration | Single Dual Emitter |