IGBT Modules 1700V/85A High Voltage XPT IGBT
Lead Time: 581 Days
Products specifications
| Configuration | Single Dual Emitter |
| Minimum Operating Temperature | - 55 C |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 88 A |
| Pd - Power Dissipation | 680 W |
| Packaging | Tube |
| Gate-Emitter Leakage Current | 100 nA |
| Collector-Emitter Saturation Voltage | 3 V |
| Maximum Operating Temperature | + 175 C |
| Collector- Emitter Voltage VCEO Max | 1700 V |