IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
Products specifications
| Collector- Emitter Voltage VCEO Max | 900 V |
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 100 nA |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 55 C |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Continuous Collector Current at 25 C | 115 A |
| Packaging | Tube |
| Configuration | Single |