IGBT Modules 550 Amps 1200V
Products specifications
| Gate-Emitter Leakage Current | 1.6 uA |
| Continuous Collector Current at 25 C | 670 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Configuration | Single |
| Packaging | Bulk |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 2.3 V |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 2.75 kW |