IGBT Modules 75 Amps 1200V
Lead Time: 0 Days
Products specifications
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 1.2 kV |
| Gate-Emitter Leakage Current | 200 nA |
| Maximum Operating Temperature | + 125 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 370 W |
| Packaging | Bulk |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 90 A |