IGBT Modules IGBT XPT Module H Bridge
Products specifications
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 290 W |
| Gate-Emitter Leakage Current | 500 nA |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product | IGBT Silicon Modules |
| Configuration | Half Bridge |
| Continuous Collector Current at 25 C | 85 A |
| Packaging | Bulk |
| Minimum Operating Temperature | - 40 C |