IGBT Modules IGBT Module H Bridge
Products specifications
| Continuous Collector Current at 25 C | 120 A |
| Gate-Emitter Leakage Current | 500 nA |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Pd - Power Dissipation | 390 W |
| Packaging | Bulk |
| Configuration | Half Bridge |