IGBT Modules 100 Amps 1200V
Products specifications
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 1.2 kV |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 125 A |
| Pd - Power Dissipation | 640 W |
| Gate-Emitter Leakage Current | 600 nA |
| Maximum Operating Temperature | + 125 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Packaging | Bulk |