2N3906-G

Bipolar Transistors - BJT -40V -200mA TO-92
Lead Time: 70 Days

SKU: 2N3906-G

Availability: 1980 in stock

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R 6.92

R 4.15

R 2.61

R 1.67

R 1.49

R 1.13

R 0.92

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Bipolar Transistors - BJT -40V -200mA TO-92
Lead Time: 70 Days

Products specifications

Collector-Emitter Saturation Voltage	- 400 mV
Transistor Polarity	PNP
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Series	2N3906
Collector- Base Voltage VCBO	- 40 V
Gain Bandwidth Product fT	250 MHz
Collector- Emitter Voltage VCEO Max	- 40 V
Maximum DC Collector Current	- 0.2 A
Emitter- Base Voltage VEBO	- 5 V

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Products specifications

Collector-Emitter Saturation Voltage	- 400 mV
Transistor Polarity	PNP
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Series	2N3906
Collector- Base Voltage VCBO	- 40 V
Gain Bandwidth Product fT	250 MHz
Collector- Emitter Voltage VCEO Max	- 40 V
Maximum DC Collector Current	- 0.2 A
Emitter- Base Voltage VEBO	- 5 V