BC856BW-G

Bipolar Transistors - BJT -80V, -.1A
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SKU: BC856BW-G

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Bipolar Transistors - BJT -80V, -.1A
Lead Time: 0 Days

Products specifications

Gain Bandwidth Product fT	100 MHz
Emitter- Base Voltage VEBO	- 5 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector-Emitter Saturation Voltage	- 650 mV
Maximum DC Collector Current	- 0.1 A
Collector- Emitter Voltage VCEO Max	- 65 V
Minimum Operating Temperature	- 65 C
Technology	Si
Series	BC856
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 80 V

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Products specifications

Gain Bandwidth Product fT	100 MHz
Emitter- Base Voltage VEBO	- 5 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector-Emitter Saturation Voltage	- 650 mV
Maximum DC Collector Current	- 0.1 A
Collector- Emitter Voltage VCEO Max	- 65 V
Minimum Operating Temperature	- 65 C
Technology	Si
Series	BC856
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 80 V