BC858CW-G

Bipolar Transistors - BJT -30, -.1

SKU: BC858CW-G

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R 6.69

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R 1.51

R 1.15

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Bipolar Transistors - BJT -30, -.1

Products specifications

Collector- Base Voltage VCBO	- 30 V
Minimum Operating Temperature	- 65 C
Technology	Si
Transistor Polarity	PNP
Series	BC858
Collector-Emitter Saturation Voltage	- 0.65 V
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product fT	100 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 30 V
Maximum DC Collector Current	- 0.1 A
Emitter- Base Voltage VEBO	- 5 V

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Products specifications

Collector- Base Voltage VCBO	- 30 V
Minimum Operating Temperature	- 65 C
Technology	Si
Transistor Polarity	PNP
Series	BC858
Collector-Emitter Saturation Voltage	- 0.65 V
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product fT	100 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 30 V
Maximum DC Collector Current	- 0.1 A
Emitter- Base Voltage VEBO	- 5 V