2SD2661T100

Bipolar Transistors - BJT TRANS GP BJT NPN 12V 2A

SKU: 2SD2661T100

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R 24.09

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R 9.82

R 7.56

R 6.79

R 5.87

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R 4.92

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Bipolar Transistors - BJT TRANS GP BJT NPN 12V 2A

Products specifications

Configuration	Single
Collector- Base Voltage VCBO	15 V
Gain Bandwidth Product fT	360 MHz
Transistor Polarity	NPN
Minimum Operating Temperature	-
Technology	Si
Collector-Emitter Saturation Voltage	90 mV
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	12 V
Maximum DC Collector Current	2 A
Emitter- Base Voltage VEBO	6 V

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Products specifications

Configuration	Single
Collector- Base Voltage VCBO	15 V
Gain Bandwidth Product fT	360 MHz
Transistor Polarity	NPN
Minimum Operating Temperature	-
Technology	Si
Collector-Emitter Saturation Voltage	90 mV
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	12 V
Maximum DC Collector Current	2 A
Emitter- Base Voltage VEBO	6 V