UMB3NFHATN

Bipolar Transistors - BJT PNP+PNP SOT-363 4.7kO Input Resist

SKU: UMB3NFHATN

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R 7.69

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R 1.59

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Bipolar Transistors - BJT PNP+PNP SOT-363 4.7kO Input Resist

Products specifications

Technology	Si
Collector-Emitter Saturation Voltage	- 300 mV
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Emitter- Base Voltage VEBO	- 5 V
Collector- Base Voltage VCBO	- 50 V
Transistor Polarity	PNP
Gain Bandwidth Product fT	250 MHz

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Products specifications

Technology	Si
Collector-Emitter Saturation Voltage	- 300 mV
Maximum Operating Temperature	+ 150 C
Configuration	Dual
Emitter- Base Voltage VEBO	- 5 V
Collector- Base Voltage VCBO	- 50 V
Transistor Polarity	PNP
Gain Bandwidth Product fT	250 MHz