MOSFETs N+P 20V 1.5A/1A
Lead Time: 84 Days
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 700 mV, 500 mV |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Pd - Power Dissipation | 1 W |
| Number of Channels | 2 Channel |
| Qg - Gate Charge | 1.6 nC, 2.1 nC |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vds - Drain-Source Breakdown Voltage | 20 V, 30 V |
| Rds On - Drain-Source Resistance | 240 mOhms, 390 mOhms |
| Transistor Polarity | N-Channel, P-Channel |
| Id - Continuous Drain Current | 1 A, 1.5 A |
| Packaging | Cut Tape, MouseReel, Reel |