MOSFETs -20V Pch+Pch Si MOSFET
Lead Time: 112 Days
Products specifications
| Number of Channels | 2 Channel |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 8.5 nC, 8.5 nC |
| Configuration | Dual |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 8 V |
| Rds On - Drain-Source Resistance | 60 mOhms, 60 mOhms |
| Transistor Polarity | P-Channel |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Pd - Power Dissipation | 2 W |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Id - Continuous Drain Current | 3 A |
| Technology | Si |