MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
Lead Time: 90 Days
Products specifications
| Configuration | Single |
| Vgs - Gate-Source Voltage | 2.5 V |
| Pd - Power Dissipation | 200 mW |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Technology | Si |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Id - Continuous Drain Current | 200 mA |
| Rds On - Drain-Source Resistance | 4 Ohms |
| Transistor Polarity | P-Channel |
| Maximum Operating Temperature | + 150 C |