MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
Products specifications
|
Channel Mode
|
Enhancement |
|
Pd - Power Dissipation
|
1.5 W |
|
Number of Channels
|
1 Channel |
|
Technology
|
Si |
|
Id - Continuous Drain Current
|
1 A |
|
Vgs - Gate-Source Voltage
|
20 V |
|
Configuration
|
Single |
|
Rds On - Drain-Source Resistance
|
730 mOhms |
|
Transistor Polarity
|
P-Channel |
|
Packaging
|
Reel |
|
Vds - Drain-Source Breakdown Voltage
|
60 V |
|
Minimum Operating Temperature
|
- 55 C |
|
Maximum Operating Temperature
|
+ 150 C |