MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
Products specifications
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 1.5 W |
| Number of Channels | 1 Channel |
| Technology | Si |
| Id - Continuous Drain Current | 1 A |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 730 mOhms |
| Transistor Polarity | P-Channel |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |