MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V
Products specifications
|
Packaging
|
Tube |
|
Rds On - Drain-Source Resistance
|
440 mOhms |
|
Technology
|
Si |
|
Vds - Drain-Source Breakdown Voltage
|
60 V |
|
Id - Continuous Drain Current
|
2 A |
|
Configuration
|
Single |
|
Number of Channels
|
1 Channel |
|
Transistor Polarity
|
N-Channel |