2SK2615(TE12L,F)

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MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V

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MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V

Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	440 mOhms
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	2 A
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	440 mOhms
Technology	Si
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	2 A
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel