MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
Products specifications
| Pd - Power Dissipation | 90 W |
| Vgs - Gate-Source Voltage | 30 V |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 8.5 A |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 1.25 Ohms |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Configuration | Single |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |