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757-2SK3017(F)

Manufacturer: Toshiba

2SK3017(F)

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MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

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MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm

Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Id - Continuous Drain Current	8.5 A
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	1.25 Ohms
Vds - Drain-Source Breakdown Voltage	900 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C

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Products specifications

Pd - Power Dissipation	90 W
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Id - Continuous Drain Current	8.5 A
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	1.25 Ohms
Vds - Drain-Source Breakdown Voltage	900 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C