MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
Products specifications
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Configuration | Single |
| Pd - Power Dissipation | 150 W |
| Channel Mode | Enhancement |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 52 mOhms |
| Id - Continuous Drain Current | 30 A |
| Vgs - Gate-Source Voltage | 20 V |