HN1B04FU-GR,LF

Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Lead Time: 140 Days

SKU: HN1B04FU-GR,LF

Availability: 1296 in stock

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R 6.92

R 4.15

R 2.61

R 1.69

R 1.36

R 1.03

R 0.97

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Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Lead Time: 140 Days

Products specifications

Configuration	Dual
Collector-Emitter Saturation Voltage	100 mV
Gain Bandwidth Product fT	150 MHz, 120 MHz
Maximum DC Collector Current	150 mA
Collector- Emitter Voltage VCEO Max	50 V
Maximum Operating Temperature	+ 125 C
Transistor Polarity	NPN, PNP
Collector- Base Voltage VCBO	60 V, - 50 V
Emitter- Base Voltage VEBO	5 V
Series	HN1B04
Technology	Si

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Products specifications

Configuration	Dual
Collector-Emitter Saturation Voltage	100 mV
Gain Bandwidth Product fT	150 MHz, 120 MHz
Maximum DC Collector Current	150 mA
Collector- Emitter Voltage VCEO Max	50 V
Maximum Operating Temperature	+ 125 C
Transistor Polarity	NPN, PNP
Collector- Base Voltage VCBO	60 V, - 50 V
Emitter- Base Voltage VEBO	5 V
Series	HN1B04
Technology	Si