TJ60S06M3L(T6L1,NQ

MOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112
Lead Time: 140 Days

SKU: TJ60S06M3L(T6L1,NQ

Availability: 573 in stock

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R 75.61

R 45.11

R 33.07

R 28.20

R 26.14

R 24.63

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MOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112
Lead Time: 140 Days

Products specifications

Technology	Si
Qg - Gate Charge	156 nC
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Pd - Power Dissipation	100 W
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	11.2 mOhms

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Products specifications

Technology	Si
Qg - Gate Charge	156 nC
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Pd - Power Dissipation	100 W
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	11.2 mOhms