TJ8S06M3L(T6L1,NQ)

MOSFETs P-Ch MOS -8A -60V 27W 890pF 0.104
Lead Time: 140 Days

SKU: TJ8S06M3L(T6L1,NQ)

Availability: 2565 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

2000+

4000+

Price

R 43.32

R 29.48

R 19.71

R 15.58

R 14.25

R 12.74

R 12.10

Free shipping

MOSFETs P-Ch MOS -8A -60V 27W 890pF 0.104
Lead Time: 140 Days

Products specifications

Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	104 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	19 nC
Pd - Power Dissipation	27 W
Channel Mode	Enhancement
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	8 A
Transistor Polarity	P-Channel

Your name *

Your email *

Enquiry *

Products specifications

Vgs - Gate-Source Voltage	10 V
Rds On - Drain-Source Resistance	104 mOhms
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	19 nC
Pd - Power Dissipation	27 W
Channel Mode	Enhancement
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Id - Continuous Drain Current	8 A
Transistor Polarity	P-Channel