TK100L60W,VQ

MOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF
Lead Time: 140 Days

SKU: TK100L60W,VQ

Availability: 74 in stock

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R 737.69

R 582.62

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MOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF
Lead Time: 140 Days

Products specifications

Rds On - Drain-Source Resistance	15 mOhms
Vgs th - Gate-Source Threshold Voltage	3.7 V
Tradename	DTMOSIV
Pd - Power Dissipation	797 W
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Qg - Gate Charge	360 nC
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	100 A
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Configuration	Single

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Products specifications

Rds On - Drain-Source Resistance	15 mOhms
Vgs th - Gate-Source Threshold Voltage	3.7 V
Tradename	DTMOSIV
Pd - Power Dissipation	797 W
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Qg - Gate Charge	360 nC
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	100 A
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Configuration	Single