MOSFET MOSFET N-ch 600V 10A
Products specifications
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 25 nC |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Rds On - Drain-Source Resistance | 750 mOhms |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Tradename | DTMOSIV |
| Vgs - Gate-Source Voltage | 10 V |
| Pd - Power Dissipation | 45 W |
| Id - Continuous Drain Current | 10 A |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 600 V |