TK10A80E,S4X

MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Lead Time: 112 Days

SKU: TK10A80E,S4X

Availability: 18 in stock

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R 91.76

R 34.09

R 32.30

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MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Lead Time: 112 Days

Products specifications

Mounting Style	Through Hole
Configuration	Single
Technology	Si
Id - Continuous Drain Current	10 A
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	800 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Qg - Gate Charge	46 nC
Tradename	DTMOSIV
Pd - Power Dissipation	50 W
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	700 mOhms

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Products specifications

Mounting Style	Through Hole
Configuration	Single
Technology	Si
Id - Continuous Drain Current	10 A
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	800 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Qg - Gate Charge	46 nC
Tradename	DTMOSIV
Pd - Power Dissipation	50 W
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	700 mOhms