TK10A80W,S4X

MOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W
Lead Time: 157 Days

SKU: TK10A80W,S4X

Availability: 188 in stock

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R 105.86

R 53.31

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MOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W
Lead Time: 157 Days

Products specifications

Technology	Si
Rds On - Drain-Source Resistance	460 mOhms
Vds - Drain-Source Breakdown Voltage	800 V
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	19 nC
Pd - Power Dissipation	40 W
Tradename	DTMOSIV
Id - Continuous Drain Current	9.5 A
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Rds On - Drain-Source Resistance	460 mOhms
Vds - Drain-Source Breakdown Voltage	800 V
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	19 nC
Pd - Power Dissipation	40 W
Tradename	DTMOSIV
Id - Continuous Drain Current	9.5 A
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel