MOSFETs MOSFET NChannel 0.33ohm DTMOS
Lead Time: 224 Days
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Pd - Power Dissipation | 35 W |
| Qg - Gate Charge | 25 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 330 mOhms |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Configuration | Single |
| Id - Continuous Drain Current | 11.1 A |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |