MOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W
Lead Time: 140 Days
Products specifications
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Qg - Gate Charge | 23 nC |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Tradename | DTMOSIV |
| Vgs - Gate-Source Voltage | 20 V |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 11.5 A |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 45 W |
| Configuration | Single |