TK12P60W,RVQ

MOSFETs DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
Lead Time: 140 Days

SKU: TK12P60W,RVQ

Availability: 757 in stock

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MOSFETs DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
Lead Time: 140 Days

Products specifications

Vgs - Gate-Source Voltage	30 V
Configuration	Single
Id - Continuous Drain Current	11.5 A
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	100 W
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	3.7 V
Number of Channels	1 Channel
Technology	Si
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	340 mOhms
Qg - Gate Charge	25 nC
Tradename	DTMOSIV
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C

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Products specifications

Vgs - Gate-Source Voltage	30 V
Configuration	Single
Id - Continuous Drain Current	11.5 A
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	100 W
Packaging	Reel
Vgs th - Gate-Source Threshold Voltage	3.7 V
Number of Channels	1 Channel
Technology	Si
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	340 mOhms
Qg - Gate Charge	25 nC
Tradename	DTMOSIV
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C