TK12Q60W,S1VQ

MOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF

SKU: TK12Q60W,S1VQ

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R 38.19

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R 27.43

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MOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF

Products specifications

Id - Continuous Drain Current	11.5 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Tradename	DTMOSIV
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	100 W
Rds On - Drain-Source Resistance	265 mOhms
Qg - Gate Charge	25 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel

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Products specifications

Id - Continuous Drain Current	11.5 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Tradename	DTMOSIV
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	100 W
Rds On - Drain-Source Resistance	265 mOhms
Qg - Gate Charge	25 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel