MOSFET N-Ch FET RDS .32Ohm Yfs 8.0s VDS 650V
Products specifications
| Technology | Si |
| Configuration | Single |
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 13 A |