MOSFET N-Ch MOS 13A 650V 170W 950pF 0.38
Products specifications
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Technology | Si |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 170 W |
| Id - Continuous Drain Current | 13 A |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 17 nC |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Rds On - Drain-Source Resistance | 380 mOhms |