MOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET
Lead Time: 224 Days
Products specifications
| Pd - Power Dissipation | 375 W |
| Minimum Operating Temperature | - |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Packaging | Cut Tape, Reel |
| Number of Channels | 1 Channel |
| Maximum Operating Temperature | + 175 C |
| Rds On - Drain-Source Resistance | 2 mOhms |
| Qg - Gate Charge | 122 nC |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Id - Continuous Drain Current | 160 A |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 100 V |