TK17A80W,S4X

MOSFETs N-Ch 800V 2050pF 32nC 17A 45W
Lead Time: 140 Days

SKU: TK17A80W,S4X

Availability: 254 in stock

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R 131.75

R 73.56

R 73.31

R 57.16

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MOSFETs N-Ch 800V 2050pF 32nC 17A 45W
Lead Time: 140 Days

Products specifications

Tradename	DTMOSIV
Vds - Drain-Source Breakdown Voltage	800 V
Rds On - Drain-Source Resistance	250 mOhms
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	45 W
Technology	Si
Number of Channels	1 Channel
Id - Continuous Drain Current	17 A
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Mounting Style	Through Hole
Packaging	Tube
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Qg - Gate Charge	32 nC
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Tradename	DTMOSIV
Vds - Drain-Source Breakdown Voltage	800 V
Rds On - Drain-Source Resistance	250 mOhms
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	45 W
Technology	Si
Number of Channels	1 Channel
Id - Continuous Drain Current	17 A
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Mounting Style	Through Hole
Packaging	Tube
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Qg - Gate Charge	32 nC
Vgs th - Gate-Source Threshold Voltage	3 V