TK17J65U(F)

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MOSFET N-Ch MOS 17A 650V 190W 1450pF 0.26

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MOSFET N-Ch MOS 17A 650V 190W 1450pF 0.26

Products specifications

Configuration	Single
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	260 mOhms
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	190 W

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Products specifications

Configuration	Single
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Mounting Style	Through Hole
Id - Continuous Drain Current	17 A
Rds On - Drain-Source Resistance	260 mOhms
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	190 W