MOSFET N-Ch FET 600V 12s IDSS 100 uA
Products specifications
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 27 nC |
| Pd - Power Dissipation | 45 W |
| Rds On - Drain-Source Resistance | 190 mOhms |
| Tradename | DTMOSIV |
| Id - Continuous Drain Current | 20 A |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Technology | Si |