MOSFET MOSFET DTMOS-II N-Ch 600V 20A
Products specifications
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Id - Continuous Drain Current | 20 A |
| Vgs - Gate-Source Voltage | 30 V |
| Technology | Si |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 190 W |
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 190 mOhms |