TK22A10N1,S4X

MOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V
Lead Time: 112 Days

SKU: TK22A10N1,S4X

Availability: 276 in stock

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MOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V
Lead Time: 112 Days

Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	11.5 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Id - Continuous Drain Current	22 A
Channel Mode	Enhancement
Pd - Power Dissipation	30 W
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	28 nC
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	11.5 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Id - Continuous Drain Current	22 A
Channel Mode	Enhancement
Pd - Power Dissipation	30 W
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	28 nC
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Number of Channels	1 Channel