MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A
Products specifications
| Technology | Si |
| Transistor Polarity | N-Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | 30 V |
| Pd - Power Dissipation | 80 W |
| Configuration | Single |
| Qg - Gate Charge | 12 nC |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Minimum Operating Temperature | - |
| Channel Mode | Enhancement |
| Tradename | DTMOSIV |
| Id - Continuous Drain Current | 2 A |
| Rds On - Drain-Source Resistance | 4.7 Ohms |