MOSFETs N-Ch DTMOSV 650V 80W 590pF 9.7A
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Rds On - Drain-Source Resistance | 290 mOhms |
| Technology | Si |
| Minimum Operating Temperature | - |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 9.7 A |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 80 W |
| Vgs - Gate-Source Voltage | 30 V |
| Packaging | Cut Tape, Reel |
| Qg - Gate Charge | 20 nC |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Tradename | DTMOSV |