MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Lead Time: 224 Days
Products specifications
| Tradename | DTMOSIV |
| Maximum Operating Temperature | + 150 C |
| Packaging | Cut Tape, Reel |
| Technology | Si |
| Pd - Power Dissipation | 50 W |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 110 nC |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 55 mOhms |
| Configuration | Single |
| Vgs th - Gate-Source Threshold Voltage | 3.7 V |
| Id - Continuous Drain Current | 38.8 A |