MOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
Lead Time: 224 Days
Products specifications
| Configuration | Single |
| Id - Continuous Drain Current | 3 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 35 W |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 2.25 Ohms |
| Transistor Polarity | N-Channel |