TK3R1A04PL,S4X

MOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W
Lead Time: 135 Days

SKU: TK3R1A04PL,S4X

Availability: 541 in stock

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MOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W
Lead Time: 112 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1.4 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Mounting Style	Through Hole
Pd - Power Dissipation	36 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Qg - Gate Charge	63.4 nC
Rds On - Drain-Source Resistance	2.5 mOhms
Id - Continuous Drain Current	82 A
Vgs - Gate-Source Voltage	20 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1.4 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Mounting Style	Through Hole
Pd - Power Dissipation	36 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Qg - Gate Charge	63.4 nC
Rds On - Drain-Source Resistance	2.5 mOhms
Id - Continuous Drain Current	82 A
Vgs - Gate-Source Voltage	20 V