MOSFETs N-Ch 40V 4670pF 63.4nC 128A 87W
Lead Time: 122 Days
Products specifications
| Maximum Operating Temperature | + 175 C |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Qg - Gate Charge | 63.4 nC |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 2.5 mOhms |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 128 A |
| Configuration | Single |
| Mounting Style | Through Hole |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Pd - Power Dissipation | 87 W |
| Vgs - Gate-Source Voltage | 20 V |