MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08
Products specifications
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Packaging | Tube |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 40 A |
| Technology | Si |
| Vgs - Gate-Source Voltage | 30 V |
| Qg - Gate Charge | 55 nC |
| Pd - Power Dissipation | 320 W |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 65 mOhms |