MOSFETs N-Ch Power MOSFET Transistor
Lead Time: 140 Days
Products specifications
| Qg - Gate Charge | 160 nC |
| Configuration | Single |
| Pd - Power Dissipation | 400 W |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Id - Continuous Drain Current | 49.2 A |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 55 mOhms |
| Technology | Si |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |